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imec and Intel have developed spintronics-based logic and promise to go beyond modern process technology
13.01.2021 [20:19],
Gennady Detinich

It’s no secret that modern technical processes are approaching the limit of their capabilities. Researchers around the world are looking for a way out of these boundaries. Spintronics seems to be promising – the use of the electron spin as a carrier of information and, more importantly, as a switching element in logic. Spin current memory has already been implemented – it is magnetoresistive RAM. Logic is trickier, but recent developments from imec and Intel inspire optimism.

Image source: imec

Imec and Intel researchers led by Eline Raymenants have created a spintronic logic device that can be completely controlled by electric current rather than magnetic fields. Intel and imec team presented their work at the recent IEEE International Electron Devices Meeting (IEDM).

Let us emphasize that we are talking about controlling the electric current, and not the magnetic field, which has already been implemented in MRAM memory and in other spintronic memory projects, for example, in IBM track memory, Russian-developed magnetic memory cells, and in other similar studies. Current control allows for a more compact and faster switching device. In addition, the logic based on current spintronics can be easily interfaced with modern CMOS logic, which will make it possible to create hybrid circuits.

The new development of imec and Intel resembles the implementation of IBM track memory, which we mentioned above. A spin-polarized current is launched along the nanowire in the form of sequences of magnetic domains separated by domain walls. Magnetic domains in such a wire follow strictly one after another, and information is transmitted in the form of the orientation of the magnetic field. The magnetic field of an individual domain, in turn, is created by the coordinated orientation of the electron spins. The orientation of the spins up, say, is represented by 0, and downward is represented by 1. Domain walls in such a scheme are a transition between one direction of magnetization and an adjacent one. They serve as the main control element for switches.

Imec and Intel development secret in new material for magnetic tunnel junction (MTJ). According to scientists, the new material is optimized for faster movement of domain walls. Transitions read information from a track – sequences of magnetic domains and domain walls – and act as logic inputs. At the IEDM, researchers presented a proof of concept: a working AND gate was created from several magnetic tunnel junctions.

An example of track memory with magnetic domains and domain walls moving along a nanowire. Image source: IBM

In the same transition MTJ writes information to the track. To do this, Intel and imec use the same technology as MRAM today. The device passes a spin-polarized current, most of the electrons of which have spins oriented in the same direction, through the magnetic domain in the junction. This current can change the direction of the magnetic field, which in the process creates or edits domain walls – encodes a sequence in 0 or 1.

Researchers say their next step will be to showcase the device in action. They have developed a majority vote (switch over the majority) that gives a positive result if most of its inputs are positive. But scientists have yet to truly study this design. Only then will the researchers know how their spintronic logic will withstand the developments of CMOS.